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| SEMiX 904GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R) 4s Trench IGBT Modules SEMiX 904GB126HDs Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Target Data Features Typical Applications Inverse diode Thermal characteristics Temperature sensor Mechanical data GB 1 06-12-2005 GES (c) by SEMIKRON SEMiX 904GB126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 06-12-2005 GES (c) by SEMIKRON SEMiX 904GB126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 11 CAL diode forw. charact., inclusive RCC'+EE' Fig. 12 Typ. CAL diode peak reverse recovery current 3 06-12-2005 GES (c) by SEMIKRON SEMiX 904GB126HDs Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 06-12-2005 GES (c) by SEMIKRON |
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